MJ11033 transistor equivalent, pnp transistor.
*Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATIN.
*Collector-Emitter Breakdown Voltage
: V(BR)CEO= -120V(Min.)
*High DC Current Gain-
: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A
*Complement to the NPN MJ11032
APPLICATIONS
*Designed for use as output devices in complementary.
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