MJ11030 transistor equivalent, npn transistor.
*Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATIN.
*Collector-Emitter Breakdown Voltage
: V(BR)CEO= 90V(Min.)
*High DC Current Gain-
: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A
*Complement to the PNP MJ11031
*Minimum Lot-to-Lot variations for robust device performance and relia.
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