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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MDF10N60GTH
·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·Switching applications ·AC-DC converters ·LED lighting ·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
10 6.
MDF10N60GTH Datasheet
