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MD1803DFP - NPN Transistor

Description

Low base-drive requirements Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta

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isc Silicon NPN Power Transistor DESCRIPTION · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current- Continuous 10 A ICM Collector peak current (tp<5ms) 15 A IB Base Current- Continuous 5 A PTOT Total dissipation at TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resist
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