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MBRS1035 - Schottky Barrier Rectifier

Features

  • Schottky barrier chip.
  • Low Power Loss/High Efficiency.
  • High Operating Junction Temperature.
  • Low Forward Voltage.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBRS1035 FEATURES ·Schottky barrier chip ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Low Forward Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency rectifier of switching mode Power supplies, freewheeling diodes, DC-to-DC converters Or polarity protection application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 35 V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current 8.
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