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LD412060 - Dual Diode-Module

Features

  • Electrically Isolated Heatsinking.
  • Metal Baseplate.
  • Low Thermal Impedance for Improved Current Capability.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LD412060 Dual Diode Isolated Module FEATURES ·Electrically Isolated Heatsinking ·Metal Baseplate ·Low Thermal Impedance for Improved Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Battery charges ·AC/DC motor drives ·Power Supplies ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VRRM Repetitive Peak Reverse Voltage IF(AV) Average Forward Current IF(RMS) R.M.S. Forward Current TC=100℃, 180° conduction, sine,50Hz IFSM Surge Forward Current I2t I2t for fusing 10ms,half sine wave,VR=0.6VRRM Tj=150℃ TJ Junction Temperature Tstg Storage Temperature Range Viso Isolation Breakdown Voltage（R.M.S.
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