KTD600K transistor equivalent, npn transistor.
*Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*High Collector Current-IC= 1.0A
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*Good Linearity of hFE
*Low Saturation Voltage
*Complement to Type 2SB631K
*100% avalanche tested
*Minimum Lot-to-Lot variat.
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