KTD1351 transistor equivalent, npn transistor.
*Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Low Saturation Voltage-
: VCE(sat)=1.0V(Max)@ (IC= 2A, IB=0.2A)
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Complement to Type KTB988
*Minimum Lot-to-Lot variations for robust device
performance and reliable oper.
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