High DC Current Gain-
: hFE = 2500-4500@ IC= -3A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general-purpose amplifier and low-speed
switching applicat
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2500-4500@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25℃ Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
-0.
KT0718 Datasheet
