KSB601 transistor equivalent, pnp transistor.
*Designed for use in low-frequency power amplifiers and low-
speed switching applications.
*Ideal for use in dir.
*High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
*Minimum Lot-to-Lot variations for robust de.
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