IXTY26P10T datasheet, mosfet equivalent, INCHANGE

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datasheet Download (Size : 257.34KB)

Features and benefits

*Static drain-source on-resistance: RDS(on)≤90mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance an.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description

*High side switching
*Push pull amplifiers
*Current regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±15 V ID Drain Current-Continuous -2.

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