IXTP26P10T mosfet equivalent, p-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤90mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance an.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
*High side switching
*Push pull amplifiers
*Current regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±15
ID
Drain Current-Continuous
-26
IDM
Drai.
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