IXTH96N20P mosfet equivalent, n-channel mosfet.
*Static Drain-Source On-Resistance
: RDS(on) = 24mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable oper.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
.
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