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IXTA24P085T - P-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤65mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc P-Channel MOSFET Transistor IXTA24P085T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -85 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous -24 IDM Drain Current-Single Pulsed -80 PD Total Dissipation @TC=25℃ 83 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.5 UNIT ℃/W isc website：www.iscsemi.
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