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IXTA12N70X2 - N-Channel MOSFET

Features

  • With TO-263(D2PAK) packaging.
  • Low gate charge.
  • High speed switching.
  • Low on-resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc N-Channel MOSFET Transistor IXTA12N70X2 ·FEATURES ·With TO-263(D2PAK) packaging ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 700 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation 180 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.69 UNIT ℃/W isc website：www.iscsemi.
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