Datasheet4U Logo Datasheet4U.com

IXKC20N60C - N-Channel MOSFET

Key Features

  • High power dissipation.
  • Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXKC20N60C CoolMOS Power MOSFET IXYS Corporation
IXKC23N60C5 Power MOSFET IXYS
IXKC25N80C Power MOSFET IXYS
IXKC13N80C CoolMOS Power MOSFET IXYS Corporation
IXKC15N60C5 Power MOSFET IXYS

Other Datasheets by Inchange Semiconductor

Part Number Description
IXKC23N60C5 N-Channel MOSFET
IXKC13N80C N-Channel MOSFET
IXKC15N60C5 N-Channel MOSFET
IXKC19N60C5 N-Channel MOSFET
IXKH20N60C5 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 15 IDM Drain Current-Single Pulsed 10.5 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1 UNIT ℃/W IXKC20N60C isc website：www.iscsemi.