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IXFP56N30X3 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤ 27mΩ@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% Avalanche Tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IXFP56N30X3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 27mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 112 PD Total Dissipation @TC=25℃ 320 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.39 UNIT ℃/W isc website：www.