IXFH230N10T - N-Channel MOSFET

INCHANGE

Datasheet Details

Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 3mΩ(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 IXFH230N10T Similar Datasheet

IXFH23N60Q - HiPerFET Power MOSFETs Q-Class (IXYS Corporation)
IXFH23N80Q - HiPerFET Power MOSFETs Q-Class (IXYS Corporation)
IXFH20N100P - Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFH20N50P3 - Power MOSFET (IXYS)
IXFH20N60 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFH20N60Q - HiPerFET Power MOSFETs Q-Class (IXYS Corporation)
IXFH20N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFH20N80Q - Power MOSFET (IXYS Corporation)

Other Datasheets by INCHANGE

Published: Nov 2, 2020 |