IXFA14N85XHV - N-Channel MOSFET

Inchange Semiconductor

Features

Drain Source Voltage- : VDSS ≥ 850V.
Static Drain-Source On-Resistance : RDS(on) ≤ 550mΩ@VGS= 10V.
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXFA14N85XHV n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IXFA14N85XHV
Manufacturer	Inchange Semiconductor
File Size	249.07 KB
Description	N-Channel MOSFET
Datasheet	IXFA14N85XHV Datasheet

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 850V ·Static Drain-Source On-Resistance : RDS(on) ≤ 550mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC Converters ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 850 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Plused 35 A PD Total Dissipation @TC=25℃ 460 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.