IRL8113S mosfet equivalent, n-channel mosfet.
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*Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
*Static drain-source on-resistance:
RDS(on) ≤6mΩ@VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
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*Provides the designer with an extremely effic.
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