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IRFU320 - N-Channel MOSFET

Features

  • Low drain-source on-resistance: RDS(ON) ≤1.8Ω @VGS=10V.
  • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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iscN-Channel MOSFET Transistor IRFU320 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.8Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 3.1 A IDM Drain Current-Single Pulsed 12 A PD Total Dissipation @TC=25℃ 42 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.0 UNIT ℃/W isc website：www.iscsemi.
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