Datasheet4U Logo Datasheet4U.com

IRFR3708 - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤12.5mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFR3708 Power MOSFET International Rectifier
IRFR3708PBF Power MOSFET International Rectifier
IRFR3704 Power MOSFET International Rectifier
IRFR3704PBF HEXFET Power MOSFET International Rectifier
IRFR3704Z HEXFET Power MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFR3704Z N-Channel MOSFET
IRFR3707Z N-Channel MOSFET
IRFR3709Z N-Channel MOSFET
IRFR3709ZC N-Channel MOSFET
IRFR3710Z N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IRFR3708, IIRFR3708 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Synchronous Buck Converters For Computer Processor Power ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±12 ID Drain Current-Continuous 61 IDM Drain Current-Single Pulsed 244 PD Total Dissipation @TC=25℃ 87 Tj Max.
Published: |