| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4410，IIRFB4410 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤10mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤10mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source ... |
| Datasheet |
 IRFB4410 Datasheet - 241.54KB |
