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IRF7473TRPBF - N-Channel MOSFET

Key Features

  • With SOP-8 packaging.
  • High speed switching.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor ·FEATURES ·With SOP-8 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed Tc=25℃ Tc=75℃ PD Power Dissipation Tj Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-a) Channel-to-ambient thermal resistance INCHANGE Semiconductor IRF7473TRPBF VALUE 100 ±20 6.9 5.5 55 2.5 -55~150 -55~150 UNIT V V A A W ℃ ℃ MAX 50 UNIT ℃/W isc website：www.