*This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed application.

*Drain Current
  –ID=9.3A@ TC=25℃
*Drain Source Voltage- : VDSS= 200V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)
*Fast Switching Speed
*Low Drive Requirement
*Minimum Lot-to-Lot variations for .

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