IRF5210 mosfet equivalent, p-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤0.06Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance a.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Vo.
*Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
.
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