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IRF150MPBF - N-Channel MOSFET

Description

Drain Current ID=40A@ TC=25℃ Drain Source Voltage- : VDSS= 100V(Min) Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Swi

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.055Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·Motor controls ·High energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 40 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.
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