logo

IPP60R180C7 Datasheet, INCHANGE

IPP60R180C7 mosfet equivalent, n-channel mosfet.

IPP60R180C7 Avg. rating / M : 1.0 rating-12

datasheet Download

IPP60R180C7 Datasheet

Features and benefits


*Static drain-source on-resistance: RDS(on) ≤0.18Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for r.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description


*Combines the experience of the leading SJ MOSFET supplier with high class innovation
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous .

Image gallery

IPP60R180C7 Page 1 IPP60R180C7 Page 2

TAGS

IPP60R180C7
N-Channel
MOSFET
IPP60R180P7
IPP60R120C7
IPP60R125C6
INCHANGE

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts