IPP60R125C6 mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on) ≤0.125Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for .
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
*Provide all benefits of a fast switching super junction MOS
while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
Dra.
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