*Static drain-source on-resistance: RDS(on) ≤0.08Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for r.

*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-So.

IPI80CN10NG

IPI80N03S4L-03

IPI80N03S4L-04

IPI80N04S2-04

IPI80N04S2-H4

IPI80N04S3-03

IPI80N04S3-06

IPI80N04S4-03

IPI80N04S4-04

IPI80N04S4L-04

IPI80N06S2-07

IPI80N06S2-08

IPI80N06S2L-05

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts