FQP50N06L
FQP50N06L is N-Channel MOSFET manufactured by Inchange Semiconductor.
DESCRIPTION
- Drain Current ID=50A@ TC=25℃
- Drain Source Voltage-
: VDSS=60V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 22mΩ(Max)
- Fast Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- High current , high speed switching
- Switch mode power supplies
- DC-DC converters for tele, industrial,and lighting equipment ideal for monitor’s B+ function
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
±25
Drain Current-continuous@ TC=25℃
Drain Current-continuous@ TC=100℃
Power Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature Range
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
FQP50N06L isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor
- ELECTRICAL CHARACTERISTICS...
