Datasheet Details
| Part number | FQA140N10 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 254.71 KB |
| Description | N-Channel MOSFET |
| Download | FQA140N10 Download (PDF) |
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| Part number | FQA140N10 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 254.71 KB |
| Description | N-Channel MOSFET |
| Download | FQA140N10 Download (PDF) |
|
|
|
·Designed for use in audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 140 A IDM Drain Current-Single Pluse 560 A PD Total Dissipation @TC=25℃ 375 W TJ Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FQA140N10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor FQA140N10.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FQA140N10 | 100V N-Channel MOSFET | Fairchild Semiconductor |
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