FMW47N60S1HF - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-247 packaging.
With low gate drive requirements.
Low switching loss.
Low on-state resistance.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

FMW47N60S1HF n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	FMW47N60S1HF
Manufacturer	Inchange Semiconductor
File Size	209.12 KB
Description	N-Channel MOSFET
Datasheet	FMW47N60S1HF Datasheet

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMW47N60S1HF ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 47 29.7 141 PD Total Dissipation 390 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.