FJP13009 transistor equivalent, silicon npn power transistor.
*Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited .
*Collector
–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
*Collector Saturation Voltage
: VCE(sat) = 1.5 (Max) @ IC= 8.0A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIO.
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