High Collector Breakdown Voltage-
: V(BR)CEO= 230V(Min.)
Good Linearity of hFE
Complement to Type FJA4213
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Power amplifier applications
Recommend for 80W high fidelity audio f
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isc Silicon NPN Power Transistor
FJA4313
DESCRIPTION ·High Collector Breakdown Voltage-
: V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type FJA4213 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
130
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
FJA4313 Datasheet
