Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
DC Current Gain-
: hFE= 50(Min)@ IC= -3A
Complement to Type FJA4310
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose application
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isc Silicon PNP Power Transistor
FJA4210
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·DC Current Gain-
: hFE= 50(Min)@ IC= -3A ·Complement to Type FJA4310 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-1.5
A
100
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website：www.iscsemi.
FJA4210 Datasheet
