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FDPF3860T - N-Channel MOSFET

Key Features

  • With TO-220F packaging.
  • Drain Source Voltage- : VDSS ≥ 100V.
  • Static drain-source on-resistance: RDS(on) ≤ 38.2mΩ@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor FDPF3860T ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 38.2mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation 33.8 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 3.