| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDD3682 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Converters and off-line UPS ·High Voltage Synchronous Rectifier ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt... |
| Features |
·Static drain-source on-resistance: RDS(on)≤36mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Converters and off-line UPS ·High Voltage Synchronous Rectifier ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Sourc... |
| Datasheet |
 FDD3682 Datasheet - 220.81KB |
