DS15 transistor equivalent, npn transistor.
*Designed for general purpose power amplification and
switching such as output or driver stages in applications such.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*Fast Switching Speeds
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
*Designed for general purpose power amplification and.
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