D858 transistor equivalent, silicon npn power transistor.
*Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VC.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Good Linearity of hFE
*High Collector Power Dissipation
APPLICATIONS
*Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VAL.
Image gallery
TAGS