D1412 transistor equivalent, silicon npn power transistor.
*High current switching applications.
*Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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*Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min)
*Complement to Type 2SB1019
APPLICATIONS
*High current switching applications.
*Power amplifier applicati.
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