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CLA40E1200HR - Thyristors

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General Description

·With TO-247 packaging ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Battery charging system ·Uninterruptible power supply ·Variable speed motor drive ·Industrial welding systems ·By pass AC switch INCHANGE Semiconductor CLA40E1200HR ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current @Tc=95℃ Surge non-repetitive on-state current 50Hz 60Hz Average gate power dissipation ( over any 20 ms period ) @Tc=125℃ Tj Operating junction temperature Tstg Storage temperature MAX UNIT 1200 V 1200 V 63 A 650 700 A 0.5 W -40~150 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM Rated;

Tj=25℃ IDRM Repetitive peak off-state current VD=VDRM Rated;

Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=40A;tP=380μs VD =6V VD =6V Rth (j-c) Junction to case For AC MIN MAX UNIT 50 μA 4 mA 1.25 V 50 mA 1.5 V 0.8 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor CLA40E1200HR NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

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isc Thyristors.

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