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C4421 - Silicon NPN Power Transistor

General Description

Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) Wide Area of Safe Operation High Speed Switching APPLICATIONS

Designed for high speed switching applications.

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Full PDF Text Transcription for C4421 (Reference)

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC4421 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area...

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N ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3A ICM Collector Current-Peak 6A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 1.2 A 2 W 40 150 ℃ -55~150 ℃ isc Web

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