INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4371
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400(Min)
·Excellent Switching Times-
: tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A
APPLICATIONS
·Switching regulator application
·High voltage switching application
·High Speed DC-DC converter application
·Fluorescent light ballastor application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
7A
IBB Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
1A
2
W
30
150 ℃
-55~150 ℃
isc Website：www.iscsemi.cn
Free Datasheet http://www.datasheet4u.net/
