C3747
DESCRIPTION
- Good Linearity of h FE
- High Switching Speed
- Low Collector Saturation Voltage
- plement to Type 2SA1470
APPLICATIONS
- Inductance, lamp drivers
- Inverters, converters
- Power amplifiers
- High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80 V
VCEO Collector-Emitter Voltage
60 V
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
ICM Collector Current-Pulse
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature
10 A
25 W
150 ℃
-55~150 ℃ isc Website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SC3747
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1m A; RBE= ∞
V(BR)CBO Collector-Base Breakdown...
