C3306 transistor equivalent, silicon npn power transistor.
*Switching regulator and high voltage switching
applications.
*High speed DC-DC converter applications.
ABSOLUT.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
*High Switching Speed
*High Reliability
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Switching regulator and hig.
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