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C122B1 - Thyristors

General Description

With TO-220 packaging High heat dissipation and durability Thermowatt construction for low thermal Glass passivated junctions and center gate fire for greater parameter uniformity and stability Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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isc Thyristors INCHANGE Semiconductor C122B1 DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;60HZ;Tc=75℃ ) PG(AV) Average gate power dissipation Tp=8.3ms;Tc=70℃ Tj Operating junction temperature Tstg Storage temperature MIN UNIT 200 V 200 V 8 A 90 A 0.