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BUZ74A - N-Channel MOSFET

Features

  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max).
  • Fast Switching Speed.
  • Low Drive Requirement.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

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isc N-Channel Mosfet Transistor BUZ74A ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for witched mode power supplies,motor control, welding,DC-DC & DC-AC converters, and in general purpose switching applications.switching regulators, switching converters. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=27℃ 2.1 A IDM Drain Current-Single Plused 8.5 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
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