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BUX42 - NPN Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= 1.2V (Max.)@IC= 4A Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

military and industrial equipment.

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V (Max.)@IC= 4A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEO VCEX VCBO Collector-Emitter Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 250 V 300 V 300 V 7 V 12 A 15 A 2.
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