BUR20 transistor equivalent, npn transistor.
*Designed for use in high power amplifier and switching
circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY.
*High DC Current Gain-hFE=10(Min)@IC = 50A
*Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 25A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in high power amplif.
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